Shielded gate MOSFET device with a funnel-shaped trench
US8816431B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 9, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Apr 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET device has a funnel-shaped trench etched in a semiconductor substrate. The funnel-shaped trench has flared rim extending from a wider cross section trench mouth at the surface of the semiconductor substrate to a narrower cross section trench body portion which terminates in an epilayer portion of the semiconductor substrate. A gate electrode is disposed in the trench on the flared rim. Source and gate regions of the device abut upper and lower portions of the flared rim, respectively. A drain region of the device, which abuts the narrower cross section trench body portion, is self-aligned with a lower edge of a gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.