Patent · US Active

IC device including package structure and method of forming the same

US8816501B2 · kind B2 · utility

1Cited by

4References

20Claims

0Family size

Assignee

Semiconductor Manufacturing International Corp. · CN

Inventors

Zhenghao Gan · Shanghai, CN
Fang Chen · 余新镇, CN

Key dates

Filing date	Nov 22, 2012
Grant date	Aug 26, 2014
Priority date	—
Expiry date	Jan 19, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various embodiments provide semiconductor devices including a package structure and methods of forming the semiconductor devices. In one embodiment, the package structure can include a through-hole at least partially filled by one or more layers of material(s) to form a through-hole interconnect between semiconductor devices in the package structure. The through-hole can be filled by an insulating layer, a diffusion barrier layer, a metal interconnect layer, and/or a protective layer having a total thickness from the sidewall of the through-hole of less than or equal to the radius of the through-hole.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.