Linear image sensor in CMOS technology
US8817150B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Dec 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A time-delay-integration image sensor comprises a matrix of pixels organized in rows and columns. Each pixel comprises a first photosensitive element, a storage node and a first transfer element connected between the first photosensitive element and the storage node, Each pixel further comprises a second photosensitive element, a second transfer element connected between the second photosensitive element and the storage node, and a third transfer element connected between the storage node and the second photosensitive element of an adjacent pixel of the column. A control circuit is configured to simultaneously command the first and second transfer elements to on state and the third transfer element to off state, and, in a distinct phase, to simultaneously command the first and third transfer elements to on state and the second transfer element to off state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.