Liquid crystal display device comprising a TFT with a barrier metal formed of a first layer and a second layer wherein the first layer is denser than the second layer
US8817200B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 16, 2011 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Nov 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/441
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A contact resistance in a through-hole with a source or a drain electrode connected to a TFT is decreased, thereby improving the operation efficiency of a display device.In the through-hole, a source portion of the TFT is connected to a source electrode 8. The source electrode 8 is formed of three layers comprising a barrier metal, an Al alloy 82, and a cap metal 83. The barrier metal is divided into a lower layer 81a in contact with the semiconductor layer and an upper layer 81b in contact with the Al alloy. The lower layer 81a of the barrier metal is formed by sputtering, the lower layer 81a is heat-treated and, subsequently, an upper layer 81b of the base metal, the Al alloy 82, and the cap metal 83 are formed continuously by sputtering. Since the upper layer 81b of the barrier metal in contact with the Al alloy 82 is not oxidized, increase in the contact resistance in the through-hole can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.