Memory circuits and methods of making and designing the same
US8819603B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2012 |
| Grant date | Aug 26, 2014 |
| Priority date | — |
| Expiry date | Dec 14, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/412
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A circuit can include a plurality of storage circuits, each having a pair of first conductivity type transistor having sources commonly connected to a first node, and gates and drains cross-coupled between first and second storage node; and a pair of second conductivity type transistor having sources commonly connected to a second node, and gates and drains cross-coupled between the first and second storage node; wherein each of the second conductivity type transistors comprises a screening region of the first conductivity type formed below the channel region and has a predetermined minimum dopant concentration. Alternatively, a circuit can include a pair of first conductivity type transistor having sources commonly connected to a first supply node configured to receive a first supply voltage, and gates and drains cross-coupled between first and second storage node; and a bias circuit configured to apply at least a first body bias voltage to bodies of the first conductivity type transistors that is different than the first supply voltage. Methods for designing such storage circuits are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.