Nanowire manufacturing method
US8821740B2 · kind B2 · utility
1Cited by
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17Claims
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Key dates
| Filing date | Jun 28, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Jun 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/298
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a nanowire manufacturing method, comprising forming a plurality of grid patterns on a substrate, forming a nanowire on the grid patterns, and separating the grid pattern and the nanowire. According to the present invention, the width and height of the nanowire can be adjusted by controlling the wet-etching process time period, and the nanowire can be manufactured at a room temperature at low cost, the nanowire can be mass-manufactured and the nanowire with regularity can be manufactured even in case of mass production.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.