MgO-based coating for electrically insulating semiconductive substrates and production method thereof
US8821961B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 12, 2005 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Oct 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a magnesium oxide-based (MgO) inorganic coating intended to electrically insulate semiconductive substrates such as silicon carbide (SiC), and to a method for producing such an insulating coating. The method of the invention comprises the steps of preparing a treatment solution of at least one hydrolysable organomagnesium compound and/or of at least one hydrolysable magnesium salt, capable of forming a homogeneous polymer layer of magnesium oxyhydroxide by hydrolysis/condensation reaction with water; depositing the treatment solution of the hydrolysable organomagnesium compound or of the hydrolysable magnesium salt, onto a surface to form a magnesium oxide-based layer; and densifying the layer formed at a temperature of less than or equal to 1000° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.