Method of fabricating a semiconductor device

US8822234B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Xinpeng Wang · Singapore, SG
• Haiyang Zhang · Shanghai, CN

Key dates

• Filing date: Dec 20, 2012
• Grant date: Sep 2, 2014
• Expiry date: Feb 18, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/01

Abstract

A method of fabricating a miniaturized semiconductor device so as to form MTJ elements therein include the steps of depositing a magnetic tunnel junction (MTJ) precursor layer on a substrate and planarizing the precursor layer; forming a sacrificial and patternable dielectric layer on the MTJ precursor layer; patterning the sacrificial dielectric layer in accordance with predetermined placements and shapes of a to-be-formed hard mask, the patterning forming corresponding openings in the sacrificial dielectric layer; depositing an etch-resistant conductive material such as Cu in the openings for example by way of plating, and selectively removing the sacrificial dielectric layer so as to leave behind the etch-resistant conductive material in the form of a desired hard mask. Using the hard mask to etch and thus pattern the MTJ precursor layer so as to form MTJ elements having desired locations, sizes and shapes.