Patent · US Active

Thin silicon solar cell and method of manufacture

US8822257B2 · kind B2 · utility

18Cited by
1References
11Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 18, 2013
Grant dateSep 2, 2014
Priority date
Expiry dateJun 18, 2033

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of fabricating a solar cell is disclosed. The method includes the steps of forming a sacrificial layer on a silicon substrate, forming a doped silicon layer atop the sacrificial substrate, forming a silicon film atop the doped silicon layer, forming a plurality of interdigitated contacts on the silicon film, contacting each of the plurality of interdigitated contacts with a metal contact, and removing the sacrificial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.