Self-aligned insulated film for high-k metal gate device
US8822283B2 · kind B2 · utility
6Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2011 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Dec 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making an integrated circuit includes providing a semiconductor substrate and forming a gate dielectric over the substrate, such as a high-k dielectric. A metal gate structure is formed over the semiconductor substrate and the gate dielectric and a thin dielectric film is formed over that. The thin dielectric film includes oxynitride combined with metal from the metal gate. The method further includes providing an interlayer dielectric (ILD) on either side of the metal gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.