Photoelectric conversion device, method for manufacturing the same, photo sensor and imaging device
US8822808B2 · kind B2 · utility
3Cited by
0References
39Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 24, 2011 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Mar 24, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided are a photoelectric conversion device capable of controlling an absorbance of the red region at a wavelength of 600 nm or more, and an imaging device having an improved color reproduction by using the photoelectric device. Provided are a photoelectric conversion device that includes a pair of electrodes, and a photoelectric conversion layer disposed between the pair of electrodes, in which the photoelectric conversion layer contains a p-type semiconductor compound and two or more different kinds of unsubstituted fullerenes, and an imaging device that includes the photoelectric conversion device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.