Photovoltaic silicon solar cells
US8822815B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2009 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Jul 3, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photovoltaic semiconductor solar cell with a backside semiconductor-oxide-nitride-oxide nonvolatile charge storage structure (referred to as a “PHONOS solar cell”) is disclosed. The PHONOS solar cell includes a semiconductor surface region, a semiconductor bulk region, and a backside structure that includes the SONO nonvolatile charge storage structure and a backside contact. The backside SONO nonvolatile charge storage structure greatly improves solar cell efficiency gains by eliminating “backside” losses, i.e., losses due to the recombination of photo-generated minority charge carriers created by the incident sunlight. The PHONOS solar cell is a highly efficient, ultra-thin, semiconductor solar cell that can be manufactured at low cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.