Patent · US Active

Direct wafer bonding

US8822817B2 · kind B2 · utility

2Cited by

8References

30Claims

0Family size

Assignee

The Boeing Company · US

Inventors

Dhananjay M. Bhusari · Kaiserslautern, DE
Daniel C. Law · Arcadia, US

Key dates

Filing date	Dec 3, 2010
Grant date	Sep 2, 2014
Priority date	—
Expiry date	Dec 19, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The disclosure provides for a direct wafer bonding method including providing a bonding layer upon a first and second wafer, and directly bonding the first and second wafers together under heat and pressure. The method may be used for directly bonding an GaAs-based, InP-based, GaP-based, GaSb-based, or Ga(In)N-based device to a GaAs device by introducing a highly doped (Al)(Ga)InP(As)(Sb) layer between the devices. The bonding layer material forms a bond having high bond strength, low electrical resistance, and high optical transmittance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.