Nonvolatile memory device and method for manufacturing same
US8822968B2 · kind B2 · utility
13Cited by
0References
10Claims
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Assignee
Inventor
Key dates
| Filing date | Aug 31, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a nonvolatile memory device includes a first wiring layer. The device includes a second wiring layer intersecting with the first wiring layer. And the device includes a first memory layer provided at a position where the first wiring layer and the second wiring layer intersect. And the first memory layer contacts with the first wiring layer, and the first wiring layer is a layer which is capable of supplying a metal ion to the first memory layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.