Phase-change memory device and flexible phase-change memory device insulating nano-dot
US8822970B2 · kind B2 · utility
2Cited by
11References
5Claims
0Family size
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Key dates
| Filing date | Feb 21, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Feb 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Provided are a phase-change memory device using insulating nanoparticles, a flexible phase-change memory device and a method for manufacturing the same. The phase-change memory device includes an electrode, and a phase-change layer in which a phase change occurs depending on heat generated from the electrode, wherein insulating nanoparticles formed from a self-assembled block copolymer are provided between the electrode and the phase-change layer undergoing crystallization and amorphization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.