Amorphous multi-component metallic thin films for electronic devices
US8822978B2 · kind B2 · utility
11Cited by
11References
25Claims
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Key dates
| Filing date | Apr 23, 2013 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Apr 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/00
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.