Patent · US Active

Pixel structure and manufacturing method thereof

US8823000B2 · kind B2 · utility

0Cited by
1References
8Claims
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Inventors

Key dates

Filing dateApr 2, 2012
Grant dateSep 2, 2014
Priority date
Expiry dateJun 29, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D86/60

Abstract

A pixel structure includes a substrate, a gate line, a data line, a semiconductor pattern, a non-metal source electrode pattern, a non-metal drain electrode pattern, and a pixel electrode. The gate line and the data line are disposed on the substrate. The semiconductor pattern is disposed on the gate line, and the semiconductor pattern overlaps two corresponding edges of the gate line along a vertical projective direction. The non-metal source electrode pattern and the non-metal drain electrode pattern are disposed on the semiconductor pattern. The non-metal source electrode pattern and the non-metal drain electrode pattern are respectively disposed on two corresponding edges of the gate line. The non-metal source electrode pattern is partially disposed between the data line and the gate line. The pixel electrode is electrically connected to the non-metal drain electrode pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.