Off-axis silicon carbide substrates
US8823014B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 13, 2010 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Sep 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of epitaxial growth of a material on a crystalline substrate includes selecting a substrate having a crystal plane that includes a plurality of terraces with step risers that join adjacent terraces. Each terrace of the plurality or terraces presents a lattice constant that substantially matches a lattice constant of the material, and each step riser presents a step height and offset that is consistent with portions of the material nucleating on adjacent terraces being in substantial crystalline match at the step riser. The method also includes preparing a substrate by exposing the crystal plane; and epitaxially growing the material on the substrate such that the portions of the material nucleating on adjacent terraces merge into a single crystal lattice without defects at the step risers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.