Optoelectronic semiconductor body and method for the production thereof

US8823024B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Karl Engl · Niedergebraching, DE
• Patrick Rode · Regensburg, DE
• Lutz Hoeppel · Alteglofsheim, DE
• Martin Strassburg · Tegernheim, DE

Key dates

• Filing date: Feb 25, 2009
• Grant date: Sep 2, 2014
• Expiry date: Dec 8, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/857
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An optoelectronic semiconductor body comprises a substantially planar semiconductor layer sequence having a first and a second main side, which has an active layer suitable for generating electromagnetic radiation. Furthermore, the semiconductor body comprises at least one trench that severs the active layer of the semiconductor layer sequence and serves for subdividing the active of the semiconductor layer sequence into at least two electrically insulated active partial layers. A first and second connection layer arranged on a second main side serve for making contact with the active partial layers. In this case, the first and second connection layers for making contact with the at least two active partial layers are electrically conductively connected to one another in such a way that the active partial layers form a series circuit.