Semiconductor light-emitting structure

US8823038B2 · kind B2 · utility

Assignee

• Huga Optotech Inc. · TW

Inventors

• Jun Li · Brooklyn, US
• Kuo-Chen Wu · Taipei, TW
• Wei-Chih Wen · Hsinchu, TW

Key dates

• Filing date: Apr 16, 2012
• Grant date: Sep 2, 2014
• Expiry date: Apr 16, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/832

Abstract

A semiconductor light-emitting structure is provided, which includes a first doped type semiconductor layer, a light-emitting layer, a second doped type semiconductor layer, a first electrical transmission layer and at least one first conductor. The light-emitting layer is disposed on the first doped type semiconductor layer and the second doped type semiconductor layer is disposed on the light-emitting layer. The first electrical transmission layer is disposed on the first doped type semiconductor layer, in which a first interface is formed between the first electrical transmission layer and the first doped type semiconductor layer. The first conductor is disposed on the first doped type semiconductor layer. The first electrical transmission layer connects the first conductor. A second interface is formed between each of the first conductor and the first doped type semiconductor layer, and the resistance of the second interface is less than the resistance of the first interface.