Semiconductor device with vertical semiconductor element
US8823083B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Oct 3, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
A semiconductor device includes a vertical semiconductor element having a super junction structure constructed of a first conductivity-type drift layer disposed on a surface of a semiconductor substrate and second conductivity-type regions having a stripe shape defining a longitudinal direction in one direction and being arranged at a predetermined column pitch in the drift layer. When a surplus concentration obtained by dividing a difference between an electrical charge of the second conductivity-type region and an electrical charge of a first conductivity-type region by the column pitch is i, a depth of the super junction structure is z, a surplus concentration gradient as a change of the surplus concentration i per unit depth dz is di/dz, and a central withstand voltage in which a margin is added to a desired withstand voltage is Vmax, the super junction structure is configured such that the surplus concentration gradient di/dz satisfies a relation of
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.