Patent · US Active

Sensor device having electrode draw-out portions through side of substrate

US8823114B2 · kind B2 · utility

10Cited by
0References
11Claims
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Key dates

Filing dateOct 13, 2010
Grant dateSep 2, 2014
Priority date
Expiry dateMar 10, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/3025
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided is a technique for packaging a sensor structure having a contact sensing surface and a signal processing LSI that processes a sensor signal. The sensor structure has the contact sensing surface and sensor electrodes. The signal processing integrated circuit is embedded in a semiconductor substrate. The sensor structure and the semiconductor substrate are bonded by a bonding layer, forming a sensor device as a single chip. The sensor electrodes and the integrated circuit are sealed inside the sensor device, and the sensor electrodes and external terminals of the integrated circuit are led out to the back surface of the semiconductor substrate through a side surface of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.