Semiconductor structure for a radiation detector and a radiation detector

US8823124B2 · kind B2 · utility

Assignee

• First Sensor AG · DE

Inventor

• Michael Pierschel · Berlin, DE

Key dates

• Filing date: Feb 13, 2013
• Grant date: Sep 2, 2014
• Expiry date: Feb 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F39/107

Abstract

A semiconductor structure for a radiation detector, comprising a substrate composed of a semiconductor material of a first conductivity type, a semiconductor substrate, wherein the semiconductor substrate is provided with a semiconductor layer provided on the substrate and having a higher resistance in comparison to the substrate, of the first conductivity type, and electrically doped with a doping concentration, a plurality of doped regions, wherein the plurality of doped regions are provided in the semiconductor substrate and separated from each other, of a second conductivity type that is opposite from the first conductivity type, and electrically doped with a doping concentration that is higher than the doping concentration in the semiconductor substrate, at least one further doping region, and a cover layer is provided.