Semiconductor memory devices
US8824184B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2012 |
| Grant date | Sep 2, 2014 |
| Priority date | — |
| Expiry date | Nov 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory device includes a stacked structure including a plurality of wordline structures sequentially stacked that each include: a plurality of wordlines with sidewalls and extending in a first direction on the substrate, and a connecting pad extending in a second direction on the substrate and being connected in common to the plurality of wordlines. A plurality of interconnections at a height over the substrate are connected to the connecting pads of the wordline structures, respectively. The device further includes bitlines substantially vertical to a top surface of the substrate and crossing one of the sidewalls of the plurality of wordlines, and memory elements between the bitlines and the plurality of wordlines, respectively. A length of the connecting pad in the second direction is substantially equal to a product of a minimum pitch between the interconnections and a stack number of one of the plurality of wordlines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.