Patent · US Active

Static RAM

US8824197B2 · kind B2 · utility

3Cited by
0References
5Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJul 30, 2012
Grant dateSep 2, 2014
Priority date
Expiry dateDec 5, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/419
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A static RAM includes: a plurality of word lines; a plurality of pairs of local bit lines; a plurality of memory cells arranged in correspondence with intersections of the plurality of pairs of local bit lines and the plurality of word lines; a capacitance shared circuit arranged for each of the plurality of pairs of local bit lines; a common connection line connecting the plurality of capacitance shared circuits; and a pair of global bit lines connected to the plurality of pairs of local bit lines, wherein the capacitance shared circuit includes two N-channel transistors connected between the pair of local bit lines and the common connection line corresponding to each other.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.