FET nanopore sensor

US8828138B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Stephen W. Bedell · Wappingers Falls, US
• Christopher P. D'Emic · Ossining, US
• Hongbo Peng · Chappaqua, US
• Sufi Zafar · Briarcliff Manor, US

Key dates

• Filing date: May 17, 2010
• Grant date: Sep 9, 2014
• Expiry date: Jun 24, 2033

Classification

• Technology area (CPC G): Physics
• CPC primary: G01N27/4145
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A method of using a sensor comprising a field effect transistor (FET) embedded in a nanopore includes placing the sensor in an electrolyte comprising at least one of biomolecules and deoxyribonucleic acid (DNA); placing an electrode in the electrolyte; applying a gate voltage in the sub-threshold regime to the electrode; applying a drain voltage to a drain of the FET; applying a source voltage to a source of the FET; detecting a change in a drain current in the sensor in response to the at least one of biomolecules and DNA passing through the nanopore.