Method for defect reduction in magnetic write head fabrication
US8828248B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2013 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Feb 1, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3163
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Write heads may be formed by reactive ion etching (RIE) a dielectric mask and then reactive ion etching a polymeric underlayer. The first RIE affects the second RIE. The first portion of the first RIE process is performed with a ratio of CF4 to CHF3 between about 1.3 to 2, a gas flow ratio of CF4 to He between 2.2 and about 3, and a ratio of RF source power to RF bias power between about 10 and about 16. The second portion of the first RIE process is performed with a ratio of CF4 to CHF3 between about 0.3 to 0.8, a gas flow ratio of CF4 to He between about 1.2 and about 1.8, and a ratio of RF source power to RF bias between about 22 to 28. With the above parameters, the dielectric mask can be formed with minimized damage on the underlayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.