Method and materials for reverse patterning
US8828252B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2010 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Aug 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CF4 is used to “etch back” the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing O2 to etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.