Method of manufacturing light emitting device
US8828751B2 · kind B2 · utility
2Cited by
0References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | May 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/822
Abstract
Provided a method of manufacturing a semiconductor light emitting device, the method includes forming a light emitting structure by growing a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer on a substrate. The forming of the light emitting structure includes: forming a protective layer after a portion of the light emitting structure is formed forming a sacrificial layer on the protective layer; and continuously forming a further portion of the light emitting structure on the sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.