Patent · US Active

Method for producing a light-emitting diode

US8828768B2 · kind B2 · utility

3Cited by

6References

20Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Peter Stauß · Nittendorf, DE
Philipp Drechsel · Regensburg, DE

Key dates

Filing date	Sep 28, 2010
Grant date	Sep 9, 2014
Priority date	—
Expiry date	Oct 8, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02639
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method is provided for producing a light-emitting diode. A carrier substrate has a silicon surface. A series of layers is deposited on the silicon surface in a direction of growth and a light-emitting diode structure is deposited on the series of layers. The series of layers includes a GaN layer, which is formed with gallium nitride. The series of layers includes a masking layer, which is formed with silicon nitride. The masking layer follows at least part of the GaN layer in the direction of growth.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.