Method for local contacting and local doping of a semiconductor layer

US8828790B2 · kind B2 · utility

Assignee

• Max-Planck-Gesellschaft zur Föderung der Wissenschaften e.V. · US

Inventors

• Ralf Preu · Glückstadt, DE
• Andreas Grohe · Glückstadt, DE
• Daniel Biro · Glückstadt, DE
• Jochen Rentsch · Emmendingen, DE
• Marc Hofmann · Munich, DE
• Jan Nekarda · Glückstadt, DE
• Andreas Wolf · Glückstadt, DE

Key dates

• Filing date: Aug 20, 2009
• Grant date: Sep 9, 2014
• Expiry date: Apr 20, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/52
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for local contacting and local doping of a semiconductor layer including the following process steps: A) Generation of a layer structure on the semiconductor layer through i) application of at least one intermediate layer on one side of the semiconductor layer, and ii) application of at least one metal layer onto the intermediate layer last applied in step i), wherein the metal layer at least partly covers the last applied intermediate layer, B) Local heating of the layer structure in such a manner that in a local region a short-time melt-mixture of at least partial regions of at least the layers: metal layer, intermediate layer and semiconductor layer, forms. After solidification of the melt-mixture, a contacting is created between metal layer and semiconductor layer. It is essential that in step A) i) at least one intermediate layer designed as dopant layer is applied, which contains a dopant wherein the dopant has a greater solubility in the semiconductor layer than the metal of the metal layer.