Method of manufacturing semiconductor device
US8828794B2 · kind B2 · utility
35Cited by
55References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Mar 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a manufacturing process of a transistor including an oxide semiconductor film, oxygen doping treatment is performed on the oxide semiconductor film, and then heat treatment is performed on the oxide semiconductor film and an aluminum oxide film provided over the oxide semiconductor film. Consequently, an oxide semiconductor film which includes a region containing more oxygen than a stoichiometric composition is formed. The transistor formed using the oxide semiconductor film can have high reliability because the amount of change in the threshold voltage of the transistor by a bias-temperature stress test (BT test) is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.