Semiconductor device and method of forming the same
US8828817B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 23, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Jun 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device includes performing a first pre-amorphous implantation process on a substrate, where the substrate has a gate stack. The method further includes forming a first stress film over the substrate. The method also includes performing a first annealing process on the substrate and the first stress film. The method further includes performing a second pre-amorphous implantation process on the annealed substrate, forming a second stress film over the substrate, and performing a second annealing process on the substrate and the second stress film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.