Method of fabricating oxide thin film device using laser lift-off and oxide thin film device fabricated by the same
US8828845B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Dec 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.