Low dielectric constant insulating film and method for forming the same
US8828886B2 · kind B2 · utility
396Cited by
2References
17Claims
0Family size
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Key dates
| Filing date | Apr 5, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Apr 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02277
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.