Patent · US Active

Nanostructured quantum dots or dashes in photovoltaic devices and methods thereof

US8829336B2 · kind B2 · utility

2Cited by

16References

12Claims

0Family size

Assignee

Rochester Institute of Technology · US

Inventors

Ryne P. Raffaelle · Honeoye Falls, US
David Wilt · Albuquerque, US

Key dates

Filing date	May 3, 2007
Grant date	Sep 9, 2014
Priority date	—
Expiry date	Oct 31, 2028

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/548
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A photovoltaic device includes one or more structures, an array of at least one of quantum dots and quantum dashes, at least one groove, and at least one conductor. Each of the structures comprises an intrinsic layer on one of an n type layer and a p type layer and the other one of the n type layer and the p type layer on the intrinsic layer. The array of at least one of quantum dots and quantum dashes is located in the intrinsic layer in at least one of the structures. The groove extends into at least one of the structures and the conductor is located along at least a portion of the groove.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.