Back contact buffer layer for thin-film solar cells
US8829342B2 · kind B2 · utility
11Cited by
15References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2010 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Dec 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A photovoltaic cell structure is disclosed that includes a buffer/passivation layer at a CdTe/Back contact interface. The buffer/passivation layer is formed from the same material that forms the n-type semiconductor active layer. In one embodiment, the buffer layer and the n-type semiconductor active layer are formed from cadmium sulfide (CdS). A method of forming a photovoltaic cell includes the step of forming the semiconductor active layers and the buffer/passivation layer within the same deposition chamber and using the same material source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.