Organic thin film transistor
US8829494B2 · kind B2 · utility
1Cited by
1References
29Claims
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Key dates
| Filing date | Mar 12, 2009 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Dec 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/1135
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
An organic thin film transistor comprising source and drain electrodes, an organic semiconductor disposed in a channel region between the source and drain electrodes, a gate electrode, and a dielectric disposed between the source and drain electrodes and the gate electrode, wherein the source electrode and the drain electrode comprise at least one different physical and/or material property from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.