Oxide semiconductor including Ga, In, Zn, and O and A thin film transistor and a display with the oxide semiconductor including Ga, In, Zn, and O
US8829513B2 · kind B2 · utility
3Cited by
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5Claims
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Key dates
| Filing date | Mar 29, 2010 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Oct 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/124
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.