Transistor having sulfur-doped zinc oxynitride channel layer and method of manufacturing the same
US8829515B2 · kind B2 · utility
2Cited by
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8Claims
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Key dates
| Filing date | Dec 20, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Dec 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.