Light emitting diode and flip-chip light emitting diode package
US8829549B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Nov 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8581
Abstract
A light emitting diode including a first doped layer, a light emitting layer, a second doped layer and a substrate is provided. A plurality of first grooves penetrate through the second doped layer and the light emitting layer. Thus, a partial surface of the first doped layer is exposed. At least one of the plurality of first grooves extends to edges of the second dope layer and the light emitting layer. An insulating layer is disposed over a part of second doped layer and extends to sidewalls of the first grooves. A first contact is set in the first grooves and electrically connected to the first doped layer. A second contact is set on the second doped layer and electrically connected to the second doped layer. By the first grooves, the first contact can be electrically connected to the first doped layer for improving current spreading.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.