Nitride semiconductor light-emitting device and production method thereof
US8829559B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Apr 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
Abstract
In a nitride semiconductor light-emitting device having an n-side and a p-side electrode pad formed on the same side of a substrate wherein current distribution in the light-emitting device is improved by forming branch electrodes extended from the p-side electrode pad (and the n-side electrode pad), when sheet resistance values of n-side and p-side layers in the device are low enough, contact resistance between a p-type nitride semiconductor layer and a current diffusion layer of a transparent conductive film formed thereon is reduced and in-plane distribution of the sheet resistance is made uniform whereby improving the optical output, by increasing in a prescribed condition the sheet resistance value of the current diffusion layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.