Power device with monolithically integrated RC snubber
US8829624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2009 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Sep 4, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
In one general aspect, a semiconductor structure can include a power transistor including a body region extending in a silicon region, a gate electrode insulated from the body region by a gate dielectric, a source region extending in the body region where the source region is of opposite conductivity type from the body region, a source interconnect contacting the source region, and a backside drain. The semiconductor structure can include an RC snubber monolithically integrated with the power transistor in a die. The RC snubber can include a snubber electrode insulated from the silicon region by a snubber dielectric such that the snubber electrode and the silicon region form a snubber capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.