Integrated circuit devices including interconnections insulated by air gaps and methods of fabricating the same
US8829682B2 · kind B2 · utility
3Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2013 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Feb 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and methods of fabricating the same are provided. The semiconductor device may include interconnections extending in a first direction on a substrate and spaced apart from each other in a second direction perpendicular to the first direction, barrier dielectric patterns disposed on top surfaces of the interconnections, respectively, and an upper interlayer dielectric layer disposed on the interconnection. Respective air gaps are disposed between adjacent ones of the interconnections.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.