Low temperature BEOL compatible diode having high voltage margins for use in large arrays of electronic components
US8830725B2 · kind B2 · utility
10Cited by
6References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2011 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Feb 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/023
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A crystalline semiconductor Schottky barrier-like diode sandwiched between two conducting electrodes is in series with a memory element, a word line and a bit line, wherein the setup provides voltage margins greater than 1V and current densities greater than 5×106 A/cm2. This Schottky barrier-like diode can be fabricated under conditions compatible with low-temperature BEOL semiconductor processing, can supply high currents at low voltages, exhibits high on-off ratios, and enables large memory arrays.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.