Self-oscillating semiconductor laser device and driving method thereof
US8831055B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2011 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Mar 23, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/34333
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a driving method of a self-oscillating semiconductor laser device including a first compound semiconductor layer having a first conductive type and composed of a GaN base compound semiconductor, a third compound semiconductor layer and a second compound semiconductor layer configuring an emission region and a saturable absorption region, are successively laminated, a second electrode formed on the second compound semiconductor layer, and a first electrode electrically connected to the first compound semiconductor layer. The second electrode is separated into a first portion to create a forward bias state by passing current to the first electrode via the emission region and a second portion to apply an electric field to the saturable absorption region by a separation groove. The current greater than a current value where kink is occurred in optical output-current characteristics is to be passed to the first portion of the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.