Patent · US Active

Edge emitting semiconductor laser chip

US8831061B2 · kind B2 · utility

5Cited by

6References

18Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Christian Lauer · Regensburg, DE
Harald König · Bernhardswald, DE
Wolfgang Reill · Pentling, DE
Uwe Strauss · Bad Abbach, DE

Key dates

Filing date	Oct 21, 2009
Grant date	Sep 9, 2014
Priority date	—
Expiry date	May 9, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01S2301/18
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.