Nanowire stress sensors and stress sensor integrated circuits, design structures for a stress sensor integrated circuit, and related methods
US8835191B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2013 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Feb 11, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/956
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Methods for sensing a mechanical stress and methods of making stress sensor integrated circuits. The sensing methods include transferring the mechanical stress from the object to one or more nanowires in a stress sensor or stress sensor circuit and permitting the nanowires to change in length in response to the mechanical stress. An electrical characteristic of the stress sensor or stress sensor circuit, which has a variation correlated with changes in the magnitude of the mechanical stress, is measured and then assessed to determine the stress magnitude. The manufacture methods include electrically connecting nanowire field effect transistors having, as channel regions, one or more nanowires of either a different crystalline orientation or a different body width for the individual nanowires so that an offset output voltage results when mechanical strain is applied to the nanowires.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.