Manufacturing method of graphene substrate and graphene substrate
US8835286B2 · kind B2 · utility
1Cited by
1References
16Claims
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Key dates
| Filing date | Nov 2, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Nov 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/882
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a manufacturing method of a graphene-on-insulator substrate which is mass productive, of high quality, and yet is directly usable for manufacture of semiconductor devices at a low manufacturing cost. According to the manufacturing method of a graphene substrate of the invention, a metal layer and a carbide layer are heated with the metal layer in contact with the carbide layer so that carbon in the carbide layer is dissolved into the metal layer, and then the metal layer and the carbide layer are cooled so that the carbon in the metal layer is segregated as graphene on the surface of the carbide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.