Sensor, semiconductor wafer, and method of producing semiconductor wafer
US8835906B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | May 5, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.